1. Material Scientific Research and Structural Integrity
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms organized in a tetrahedral lattice, mostly in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting phenomenal atomic bond strength.
The Si– C bond, with a bond energy of approximately 318 kJ/mol, is among the toughest in structural porcelains, giving outstanding thermal security, hardness, and resistance to chemical strike.
This durable covalent network leads to a product with a melting point surpassing 2700 ° C(sublimes), making it one of one of the most refractory non-oxide ceramics offered for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC keeps mechanical toughness and creep resistance at temperatures over 1400 ° C, where lots of metals and conventional porcelains start to soften or weaken.
Its reduced coefficient of thermal development (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) makes it possible for quick thermal biking without tragic breaking, an important feature for crucible performance.
These innate buildings come from the well balanced electronegativity and comparable atomic sizes of silicon and carbon, which advertise a very steady and largely loaded crystal structure.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are usually produced from sintered or reaction-bonded SiC powders, with microstructure playing a definitive role in longevity and thermal shock resistance.
Sintered SiC crucibles are generated through solid-state or liquid-phase sintering at temperatures above 2000 ° C, frequently with boron or carbon additives to enhance densification and grain boundary communication.
This procedure generates a totally dense, fine-grained framework with minimal porosity (
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